STMicroelectronics and MACOM Successfully Produce RF GaN-on-Si Prototypes

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STMicroelectronics and MACOM Technology Solutions Holdings Inc. have announced the successful production of radio-frequency Gallium-Nitride-on Silicon (RF GaN-on-Si) prototypes. Both parties will continue to work together and enhance their relationship.

RF GaN-on-Silicon offers high potential for 5G and 6G infrastructure. GaN can offer superior RF characteristics and significantly higher output power than LDMOS for these RF PAs. Further, it can be manufactured on either silicon or silicon-carbide (SiC) wafers. The GaN-on-Si technology is expected to offer competitive performance paired with large economies of scale, enabled by its integration into standard semiconductor process flows.

This technology is expected to offer competitive performance enabling its integration into standard semiconductor process flows. With this agreement, ST and MACOM have begun discussions to further expand their efforts for advanced RF GaN-on-Si products.

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Edoardo Merli, Power Transistor Sub-Group General Manager and Executive Vice President of STMicroelectronics said, “We believe that the technology has now reached performance levels and process maturity where it can effectively challenge the established LDMOS and GaN-on-SiC. Commercialising these products is the next big milestone in our collaboration with MACOM and with continued progress.”

Stephen G. Daly, MACOM President and CEO said, “Our collaboration with ST is an important part of our RF Power strategy and I am confident that we can win market share in targeted applications where the GaN-on-Silicon technology meets the technical requirements.”


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