Monday, February 11, 2013: A component may be classified as passive, active, or electromechanic. Active components rely on a source of energy and usually can inject power into a circuit. Active components include amplifying components such as transistors, diodes, vacuum tubes, MOSFETs, TRIACs, active transducers, solid state relays, light emitting diodes (LEDs), as well as integrated circuits (ICs), and hybrid integrated circuits (HIC), such as CMOS, microcontrollers, microprocessors, logic, RAM, EPROMs, and optoelectronics. Let’s have a look at the new launches in this domain.
Model: TrenchFET, Product: MOSFET, Brand: Vishay; Manufacturer: Vishay Intertechnology, USA
Launched in December 2012, AEC-Q101-qualified, 40 V n-channel TrenchFET power MOSFET called SQM200N04-1m1L is suitable for heavy duty automotive applications, and is Vishay’s first power MOSFET to take advantage of the low resistance contribution and very high current rating of the 7-pin D2PAK package.
Designed and 100 per cent tested in production to withstand single pulse avalanche events of 100 A and 500 mJ; •Low thermal resistance of 0.4°C/W (junction to case); •Wide operating temperature range of −55°C to + 175°C; •RoHS-compliant, halogen-free, and 100 per cent Rg and UIS tested
Contact details: Ph: 1-402-563-6866; [email protected]; www.vishay.com;
India branch: Vishay Components India Pvt Ltd
Model: SuperFETII, Product: MOSFET, Brand: Fairchild Semiconductor,
Manufacturer: Fairchild Semiconductor Corporation, USA
Launched in December 2012, the 600 V N-channel SuperFET II MOSFET series is suitable for high-end, AC-DC switch mode power supply (SMPS) applications such as servers, telecommunications, computing and industrial power applications that require high power density.
Smaller stored energy in output capacitance (Eoss) for higher efficiency in light-load conditions and a best-in-class robust body diode for increased system reliability in resonant converters; •Low on-resistance and a lower gate charge (Qg) performance for a lower figure of merit (FOM); •Gate resistor (Rg) that greatly reduces gate oscillation and improves overall system performance; •Faster switching speed to maximise system efficiency; •Increased power density; •Low electromagnetic interference (EMI) noise; •Reliable operation under abnormal conditions
Contact details: Cheeweng Doh, head, application team; Ph: 408-822-2000; [email protected]; www.fairchildsemi.com
India branch: Fairchild Semiconductor (India) Pvt Ltd
Model: R2A20057BM, Product: IC, Brand: Renesas, Manufacturer: Renesas Electronics, Japan
Launched in December 2012, R2A20057BM lithium-ion (li-ion) battery charge controller IC is ideal for mobile devices employing one cell li-ion batteries, such as digital still cameras and smartphones. R2A20057BM substantially reduces the mounting area by integrating multiple power MOSFETs and charging circuits in a single chip, using a wafer-level package.
Approximately 62 per cent reduction in chip surface area compared to earlier solutions; •The use of a finer high-voltage-tolerance wafer process and wafer-level package (WL-BGA, 25-pin, 0.4 mm pitch) makes it a compact chip with a size of 2.47 mm × 2.47 mm; •Integrated 2 MHz high frequency step-down DC-DC converter enables the use of compact multi-layer-chip inductors as the external devices; •The 25 V on-chip, high input voltage tolerance enables a built-in over-voltage protection circuit and eliminates an external over-voltage protection circuit
Contact details: Ph: +65 6213 0200; sg.renesas.com
India branch: Renesas electronics India
Model: Trenchstop 5, Product: IGBT, Brand: Infineon, Manufacturer: Infineon Technologies AG, Germany
Launched in November 2012, the thin wafer insulated gate bipolar transistor (IGBT), Trenchstop 5, provides the basis for two product families. The HighSpeed 5 (H5) is a soft high speed IGBT. designed for ease of use and the plug–and-play replacement of existing IGBTs. HighSpeed 5 Fast (F5) is an efficient IGBT, with more than 98 per cent system efficiency observed in application measurements on a photovoltaic inverter using a ‘H4 bridge’ topology.
Lower conduction and switching losses compared to current leading solutions; •Higher safety margin for designs with an increased breakthrough voltage of 650 V; •Boost PFC (AC/DC) stage and high voltage DC/DC target topologies commonly found in applications such as photovoltaic inverters, UPS, etc. •Higher efficiency allows for either lower junction temperatures during operation ensuring higher lifetime reliability, or higher power density designs; •Mild positive temperature coefficient of the saturation voltage (V ce(sat)) and turn-off switching losses (E off) ensure that performance is not penalised during high temperature operation and paralleling is straightforward; •Low output capacitance (C oss and E oss) provide outstanding light-load efficiency
Contact details: Ph: +49-800 951951951; www.infineon.com
India branch: Infineon Technologies India
Model: MAX32590, Product: Microcontroller, Brand: Maxim Integrated
Manufacturer: Maxim Integrated Products, USA
Launched in November 2012, MAX32590 complies with the newest security standards making it ideal for financial terminals and a new generation of trusted devices such as multimedia enabled, portable EFT-POS terminals. As a single-chip secure microcontroller, MAX32590 is a major advance over prior designs that required numerous additional discrete components for financial terminals.
More connectivity options than competitive designs, and its improved security features comply with the industry’s newest security requirements; •External memory encryption and integrity checking, both simplify system integration and provide better IP protection and stronger overall protection against attacks; •High level of integration shrinks design size and significantly lowers implementation costs; •An ARM926 core is capable of video playback, dual external memory controllers, extended connectivity options including a 10/100 Ethernet MAC, and a USB host and device controller; •A financial terminal reference design provides a PCI-PTS 3.1 pre-approved, fully functioning, plug-and-play financial terminal that runs a secure Linux BSP
Contact details: Ph: 888-629-4642; [email protected]; www.maximintegrated.com
India branch: Maxim Intagrated Products, India
Model: FM4 Family, Product: Microcontrollers, Brand: Fujitsu
Manufacturer: Fujitsu Semiconductor Ltd, Japan
Launched in November 2012, FM4 Family of 32-bit general purpose RISC microcontrollers are based on ARM Cortex-M4 processor core. FM4 Family covers the high-end product range, featuring higher performance and enhanced functionality, and also features DSP (Digital Signal Processor) and FPU (Floating-Point number processing Unit), which were not included in the FM3 Family.
Includes SDRAM and SD card interface functions, an expanded package lineup, and the addition of a wide range of timers and serial communications functions, all delivered with flash technology, which has a solid track record also in automotive applications; •Equipped with high-speed serial communications functions, as well as high-speed, high-performance AD converters which make the products ideal for motor controls and network controls in factory automation applications as well as inverters and other industrial equipment.
Contact details: Ph: +81-3-6252-2220 [email protected]; www.fujitsu.com
India branch: Fujitsu India Pvt Ltd
Model: RBE series, Product: Schottky barrier diodes, Brand: ROHM, Manufacturer: ROHM Semiconductor, Japan
Launched in November 2012, RBE series of compact schottky barrier diodes feature low forward voltage (VF), which makes it ideal for portable applications requiring greater space savings, such as smartphones. The growing trend towards greater functionality and sophistication in smartphones and other mobile devices while reducing size and maintaining or even prolonging battery life has led to a greater demand for ultra-compact components that minimise power consumption, in particular schottky barrier diodes used in power supplies, where low VF and high average rectified current are required. Therefore, ROHM has significantly improved current efficiency by redesigning the diode element, decreasing VF by 32 per cent over conventional products. This results in lower heat generation and higher rated current, enabling smaller packages to be used.
•High current in a compact package; •Reduced mounting area by up to 80 per cent; •Low VF ensures low power consumption
Contact details: Ph: +81-75-311-2121; www.rohm.com
India branch: ROHM Semiconductor India Pvt Ltd
Model: NGBTxx, Product: IGBT, Brand: ON Semiconductor
Manufacturer: ON Semiconductor, USA
Launched in October 2012, NGBTxx series improves overall system switching efficiency, lowers power dissipation and improves system reliability. The devices expand the available product ratings up to 40 A.
NGTB40N120FLWG, NGTB25N120FLWG and NGTB15N120FLWG feature robust and cost-effective trench technology construction, and provide superior performance in high frequency switching applications; •All three devices are highly optimised for switching applications with frequencies from 10 kilohertz (kHz) to 40 kHz, delivering low on-state voltage (VCEsat) and low gate charge (Qg) characteristics, as well as exhibiting ultra-fast recovery and minimal switching losses to keep power dissipation low; •NGTB30N120LWG and NGTB40N120LWG offer low VCEsat and rugged short circuit characteristics with fast recovery diodes for low frequency (2 – 20 kHz) hard switching applications, such as motor control inverter applications; •NGTB30N120IHLWG, NGTB40N120IHLWG, NGTB20N120IHSWG, and NGTB30N120IHSWG feature balanced switching and conduction losses for induction heating and other soft switching applications operating at medium frequencies
Contact details: Ph: 1-888-743-7826; www.onsemi.com
India branch: ON Semiconductor Technology India Pvt Ltd
Model: Kinetis KW01, Product: Microcontroller, Brand: Freescale, Manufacturer: Freescale Semiconductor, USA
Launched in October 2012, Kinetis KW01 wireless microcontroller (MCU) is ideal for wirelessly networked smart energy applications. Several protocols are emerging globally for outdoor and indoor smart energy networks that require robust communication and low power consumption. Kinetis KW01 wireless MCU meets their requirements with a high-performance radio capable of up to 600 KBps using complex modulation schemes (GFSK, MSK, GMSK and OOK) while operating at multiple frequencies in the range of 290 to 1020 MHz.
Supports proprietary protocols and the industry-standard IEEE 802.15.4e/g protocol for outdoor applications; •Supports proprietary protocols or standard protocols such as 6LoWPAN, WMBUS (EN13757-4), KNX and Echonet, and for indoor applications; •Based on an ARM CortexTM-M0+ processor running up to 48 MHz with 128 KB flash memory and 16 KB SRAM, it is capable of consuming as little as 40 uA/MHz in typical conditions; •System and peripherals designed to achieve 1.7 uA device standby current with a fast wake-up time of just 4.3 microseconds
Contact details: Steve Tateosian, product marketing manager, Ph: 512 895 8850; [email protected]; www.freescale.com;
India branch: Freescale Semiconductor India Pvt Ltd
Model: SuperMESH 5 , Product: MOSFET, Brand: ST, Manufacturer: STMicroelectronics, Geneva
Launched in September 2012, SuperMESH 5 devices are capable of withstanding peak voltages up to 950 V and are offered in the ultra thin and space-saving PowerFLAT 8×8 HV package. Super-junction technology enables MOSFETs to achieve higher operating voltages with very low electrical on-resistance in relation to device size, enabling power supplies to deliver increased system reliability and energy efficiency within compact overall dimensions. The MOSFETs will enable designers to meet increasingly strict limits on maximum power and minimum energy efficiency specified by eco-design standards such as Energy Star and the EU’s Energy-related products (ErP) directive. The MOSFETs include the 900 V STx21N90K5, 950 V STx20N95K5 and 950 V STx6N95K5 in various package options.
Gate-source breakdown voltage of 30 V; •Continuous drain current of 18.5 A; •Resistance drain-source RDS (on) of 0.299 Ohms; •Power dissipation of 250 W, and a temperature range of – 55 C to +150 C; •100 per cent avalanche tested, with an extremely high dv/dt capability
Contact details: Ph: +41 22 929 29 29; www.st.com
India branch: STMicroelectronics Pvt Ltd
Model: StrongIRFET, Product: MOSFET, Brand: IR, Manufacturer: International Rectifier, USA
Launched in November 2012, StrongIRFET power MOSFETs feature ultra-low on-state resistance (RDS(on)) for a wide variety of industrial applications including battery packs, inverters, Uninterruptible Power Supplies (UPS), solar inverters, forklift trucks, power tools, mobility scooters and ORing and hot swap applications.
Improved gate, avalanche and dynamic dV/dt ruggedness; •Fully-characterised capacitance and avalanche SOA; Enhanced body diode dv/dt and di/dt capability; •Lead free/RoHS compliant, containing no lead, no bromide, and no halogen
Contact details: Ph: +1 310 252 7105, www.irf.com
India branch: International Rectifier India
Model: DFN1006, Product: Transistors, Brand: NXP, Manufacturer: NXP
Semiconductors, The Netherlands
Launched in July 2012, DFN1006B-3 (SOT883B) series includes a wide range of general purpose and switching transistors, such as the industry standard types BC847 and BC857, as well as PMBT3904 and PMBT3906. It also includes a broad choice of 42 resistor-equipped transistors (RETs), which cover all standard resistor combinations.
Offers the same high electrical and thermal performance as equivalent devices in much larger packages such as SOT23, SOT323 or SOT416, allowing a 1:1 replacement; • Saves valuable space on the PCB, as the 1006 mm (0402 inch) sized leadless package has only one-tenth the footprint and less than half the height of the SOT23
Contact details: Ph: +31-40-27 29960; www.nxp.com
India branch: NXP Semiconductors India Pvt Ltd
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