Power devices


In January 2012, Renesas Electronics Corporation launched three silicon carbide (SiC) compound power devices with a voltage tolerance of 600V.

Features and USP: The RJQ6020DPM device is for critical conduction mode power factor correction (PFC) applications. In a single package, it combines a SiC-SBD and two high voltage power MOSFETs. The reverse recovery time of the SiC-Schottky barrier diode (SBD) is only 15 nanoseconds (ns). The RJQ6021DPM device is for continuous conduction mode PFC applications. It combines in a single package a SiC-SBD and two insulated gate bipolar transistors (IGBTs). The ultra thin wafer IGBTs deliver on voltage of 1.5 V. The RJQ6022DPM device for inverter half bridge circuits combines in a single package two SiC-SBDs and two IGBTs. The IGBTs deliver on voltage of 1.5 V and in a short circuit time of 6 microseconds.

For further details: Ph: 080 67208700; www.renesas.com

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