Samsung Starts Working on New Facility For Manufacturing NAND Flash Memory

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  • Samsung will start mass-manufacturing NAND memory units at this new facility in the second half of 2021
  • Samsung’s NAND flash production network extends from Hwaseong and Pyeongtaek in Korea to Xi’an, China
Samsung’s Under Construction NAND Flash Facility

Samsung Electronics has announced plans to expand its NAND flash production capacity in Pyeongtaek, Korea. Construction, which began this May, will pave the way for mass production of Samsung’s V-NAND memory in the second half of 2021.

“The new investment reaffirms our commitment to sustain undisputed leadership in memory technologies, even in uncertain times. We will continue to serve the market with the most optimized solutions available, while contributing to growth of the overall IT industry and the economy in general,” said Cheol Choi, executive vice president of Memory Global Sales & Marketing at Samsung Electronics.

Mid- to long-term demands for NAND flash memory

In the age of the Fourth Industrial Revolution fueled by artificial intelligence, the Internet of Things and 5G expansion, the added capacity, as Samsung informed, will play a major role in helping to address mid- to long-term demands for NAND flash memory.

“As digital lifestyles become more prevalent, Samsung will continue to be proactive in making new investments in order to seize future market opportunities,” read Samsung’s official statement.

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Samsung’s NAND flash production network extends from Hwaseong and Pyeongtaek in Korea to Xi’an, China. Established in 2015, Samsung’s Pyeongtaek Campus is a hub for memory technologies, consisting of two of the world’s largest-scale production lines.

Plans to boost its foundry capacity

The company had recently announced plans to boost its foundry capacity at the company’s new production line in Pyeongtaek, Korea, to meet growing global demand for extreme ultraviolet (EUV) solutions. Korea-headquartered Samsung had announced the development of this technology during April 2019.

It had said that the 5nm FinFET process technology provides up to a 25 per cent increase in logic area efficiency with 20 per cent lower power consumption or 10 per cent higher performance as a result of process improvement to enable us to have more innovative standard cell architecture.

“This new production facility will expand Samsung’s manufacturing capabilities for sub-5nm process and enable us to rapidly respond to the increasing demand for EUV-based solutions,” said Dr ES Jung, president and head of foundry business at Samsung Electronics.

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