Infineon Acquires Siltectra In 124 Million Euro Deal

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Siltectra’s Cold Split technology will be used by Infineon to split silicon carbide (SiC) wafers, which helps in doubling the number of chips out of one wafer

Infineon Technologies AG, a world leader in semiconductor solutions, has acquired start-up Siltectra GmbH, based in Dresden, Germany, to expand its product portfolio with Siltectra’s new material silicon carbide.

As per the deal, an acquisition cost of 124 million euros was agreed upon with MIG Fonds – the venture capital investor and the main shareholder of Siltectra.

Siltectra has created Cold Split, an innovative technology, for efficiently processing crystal material, with negligible loss of material. This Cold Split technology will be used by Infineon to split silicon carbide (SiC) wafers, which helps in doubling the number of chips out of one wafer.

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Help to expand Infineon’s portfolio

Speaking on the acquisition, Dr Reinhard Ploss, CEO, Infineon, said, “This acquisition will help us expand our excellent portfolio with the new material silicon carbide as well. Our system understanding and our unique know how on thin wafer technology will be ideally complemented by the Cold Split technology and the innovative capacity of Siltectra.”

“Thanks to the Cold Split technology, the higher number of SiC wafers will make the ramp-up of our SiC products much easier, especially regarding further expansion of renewable energies and the increasing adaptation of SiC for use in the drive train of electrical vehicles,” Ploss added.

Commenting on the deal, Dr Jan Richter, CTO, Siltectra, said, “We are glad to become part of the team of the global market leader in power semiconductors. Having shown that the Cold Split technology can be used at Infineon in principle, we will now work together to transfer it to volume production.”

Technology applicable with SiC

Founded in 2010, Siltectra developed an innovative technology for splitting crystalline materials that too with negligible material loss as compared to traditional sawing technologies. In addition, the new technology can be applicable with semiconductor material SiC. The SiC products are used in highly efficient and compact solar inverters. In the coming times, SiC will play a more critical role in electro-mobility.

The Cold Split technology will be industrialised at the current site of Siltectra in Dresden and at Infineon’s facility in Villach, Austria. The handover of volume production is likely to be finished within the next five years.

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