Features and USP: These JFETs have much lower switching losses than IGBTs, allowing higher switching frequencies to be used without sacrificing the overall system’s efficiency. Alternatively, a higher output power solution can be realised within the same inverter housing. The JFETs are a complete solution consisting of the JFET, p-channel MOSFET and dedicated driver. There is no reverse recovery charge, thanks to unipolar MOSFET like characteristics. The monolithically integrated body diode has a switching performance comparable to an external SiC Schottky barrier diode.
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