IPD process technology

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On Semiconductor has launched a new integrated passive device (IPD) process technology, which combines HighQTM performance and small size for portable electronic applications.

Features and USP: This new integrated passive device (IPD) process is an enhancement of the company’s existing HighQTM copper on silicon IPD technology. The new IPD2 process features a second 5 ohm metre copper layer that increases inductor performance, allows greater flexibility and supports the design of highly precise, cost effective IPDs for RF systems in portable electronics equipment.

The high quality IPD2 process utilises advanced 20.32 cm wafer technology. It includes baluns, low pass filters, band pass filters and diplexers used in the latest portable and wireless applications. The IPD based designs will benefit circuit designers through reduced cost, reduced thickness, small footprint and higher performance that equates to longer battery life.

It also enables potential users to quickly and cost effectively assess whether their less sophisticated discrete or integrated PCB solutions, thicker or more costly ceramic solutions are suitable for conversion. Integrating passive devices on a cost effective, small sized platform with low insertion losses can provide a valuable solution for designers of battery powered portable electronics.

For further details: Nelson Lai, 2/F, No.1 Science Park East Avenue, Hong Kong Science Park, Shatin,

N T, Hong Kong, Ph:+852-26890088, Email: nelson.lai@onsemi.com,

www.onsemi.com

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